Theoretical Insights on Bandgap Engineering for Nanoribbons of the 2D Materials Family with Co-Adatoms

Abstract

The bandgap tuning of two-dimensional (2D) materials is a vital step for their potential applications in the realm of nanoelectronics, optoelectronics, and spintronics. In this context, the bandgap of cobalt (Co)-adsorbed nanoribbons of novel 2D materials (for instance, graphene (GNR), h-BN (BNNR), silicene (SiNR), germanene (GeNR), stanene (SnNR), and phosphorene (PNR)) is investigated under the effect of a transverse magnetic field via an acoustical deformation potential (ADP) scattering mechanism. Bandgaps ranging from 1.10 eV to 1.42 eV were obtained for Co-adsorbed 2D nanoribbons, which display semiconducting behaviour. In addition to that, investigating the impact of temperature on the bandgap revealed an anomalous temperature dependence of the bandgap. The outcomes of the present work would be advantageous for developing transition metal (TM)-adsorbed-nanoribbon-based nanoelectronic and spintronic devices, wherein controlling their bandgap by employing a magnetic field is a useful tool for advancing nanoribbon-based technology.