Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/11616
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dc.contributor.authorPatel, Himanshu K.
dc.contributor.authorDesai, M. D.
dc.date.accessioned2023-04-20T11:06:14Z-
dc.date.available2023-04-20T11:06:14Z-
dc.date.issued2005-01-28
dc.identifier.citationNational Conference on Power Engineering Practices and Energy Management, TIET Patiala, January 28-29, 2005, Page No. 99-102en
dc.identifier.urihttp://10.1.7.192:80/jspui/handle/123456789/11616-
dc.description.abstractOne of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast switching speed. To minimize the predominant switching losses, the switch-on and -off energies have to be low. This paper presents a comparative analysis of the performance of MOSFET and BIMOSFET in flyback converter. The main advantage of the BIMOSFET lies first in its lower turn- on losses and secondarily in its lower conduction losses. A comparison of the total energy losses between a MOSFET and a BIMOSFET results in 35 % less total losses for the BIMOSFET.en
dc.relation.ispartofseriesITFIC003-10en
dc.subjectMOSFETen
dc.subjectBIMOSFETen
dc.subjectIC Faculty Paperen
dc.subjectFaculty Paperen
dc.subjectITFIC003en
dc.titleBIMOSFET: An Energy Efficient Alternative for MOSFET in Fly Back Converteren
dc.typeFaculty Papersen
Appears in Collections:Faculty Papers, E&I

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