Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/11618
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dc.contributor.authorPatel, Himanshu K.
dc.date.accessioned2023-04-20T11:06:15Z-
dc.date.available2023-04-20T11:06:15Z-
dc.date.issued2005-03-27
dc.identifier.citationNational Conference on Information & Communication Technology (NCICT-2005), Ahmedabad, March 27, 2005en
dc.identifier.urihttp://10.1.7.192:80/jspui/handle/123456789/11618-
dc.description.abstractIn the field of toady’s power electronics, power switches play an important role. Presently, most commonly used power switches can be categorized as bipolar transistors, MOSFETs and IGBTs. In fact, power MOSFETs and IGBTs are the devices of choice for power switch designs. Recent developments in semiconductors and chip design technologies offer a wide range of power switches for different applications. With the proliferation of choices between MOSFETs and IGBTs, it is becoming increasingly difficult for today’s designer to select the best device for their application. This paper presents a few basic guidelines that will help this decision-making process. The comparison is based on the switching losses and conduction losses in the two devices.en
dc.relation.ispartofseriesITFIC003-12en
dc.subjectIC Faculty Paperen
dc.subjectFaculty Paperen
dc.subjectITFIC003en
dc.titleCompetence Comparison of IGBT and MOSFET as Power Switchen
dc.typeFaculty Papersen
Appears in Collections:Faculty Papers, E&I

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