Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/4318
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dc.contributor.authorChauhan, Chetna-
dc.contributor.authorJotania, Rajshree-
dc.contributor.authorJotania, Kanti R.-
dc.date.accessioned2013-12-26T10:05:21Z-
dc.date.available2013-12-26T10:05:21Z-
dc.date.issued2012-07-
dc.identifier.issn2249–8974-
dc.identifier.urihttp://10.1.7.181:1900/jspui/123456789/4318-
dc.descriptionInternational Journal of Advanced Engineering Research and Studies, Vol. 1 (4) Jul - Sep, 2012, Page No. 25 - 27en_US
dc.description.abstractM-type hexaferrite with the composition BaMg2Fe10O19 were synthesized using a stearic acid sol gel method. The precursors were calcinated at 650 °C, 750 °C, 850 °C and 950ºC for 4 hrs in a furnace and slowly cooled to room temperature in order to obtain BaMg2Fe10O19 crystalline ferrite powder. The dielectric constants (real @’ and imaginary @”), conductivity (D), resistivity (E) and dielectric loss (tan F) have been measured at room temperature as a function of frequency (102-106 Hz). The dielectric behavior of prepared hexaferrite samples can be explained by the mechanism of polarization and the electrical conduction mechanism is explained by using the electronic hopping model of Heike – Johnson.en_US
dc.publisherTechnical Journalsen_US
dc.relation.ispartofseriesITFEC037-5en_US
dc.subjectBaMg2Fe10O19 hexaferriteen_US
dc.subjectConductivityen_US
dc.subjectDielectric Constanten_US
dc.subjectHopping Effecten_US
dc.subjectPolarizationen_US
dc.subjectEC Faculty Paperen_US
dc.subjectFaculty Paperen_US
dc.subjectITFEC037en_US
dc.titleConductivity And Dielectric Properties Of M-Type Barium Magnesium Hexaferrite Powderen_US
dc.typeFaculty Papersen_US
Appears in Collections:Faculty Papers, EC

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