Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/4361
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dc.contributor.authorAseem, Jaymeen-
dc.contributor.authorPadaliya, Jay-
dc.contributor.authorSavani, Vijay G.-
dc.date.accessioned2014-01-09T08:16:33Z-
dc.date.available2014-01-09T08:16:33Z-
dc.date.issued2012-12-
dc.identifier.issn2250-2459-
dc.identifier.urihttp://10.1.7.181:1900/jspui/123456789/4361-
dc.descriptionInternational Journal of Emerging Technology and Advanced Engineering, Vol. 2 (12), December, 2012, Page No. 229 – 235en_US
dc.description.abstractVoltage Follower is one of the most important analog circuits required in many analog integrated circuits. It is used for the impedance matching between high impedance circuits and low impedance circuits. The design of voltage follower becomes an important issue when technology is scaled down. Due to the non-linear behavior of threshold voltage (VT) when technology is scaled down, performance of voltage follower is affected. Many versions of voltage followers have been proposed to achieve desirable output in sub-micron and deep sub-micron technologies. The selection of particular topology is dependent upon the requirements and application. In this paper, we have shown the implementation of different topologies in 90 nm technology using the Mentor Graphics Tool. We have done the pre-layout simulation of three different topologies. We have designed these circuits using ICstudio tool and analyzed their output impedance, voltage gain and power dissipation. We have prepared a comparative analysis about them.en_US
dc.publisherIJETAEen_US
dc.relation.ispartofseriesITFEC024-5en_US
dc.subjectVoltage Gainen_US
dc.subjectOutput Impedanceen_US
dc.subjectOutput Voltage Swingen_US
dc.subjectPower Dissipationen_US
dc.subjectNon-linearityen_US
dc.subjectThreshold Voltageen_US
dc.subjectDeep-sub Micron Technologyen_US
dc.subjectEC Faculty Paperen_US
dc.subjectFaculty Paperen_US
dc.subjectITFEC024en_US
dc.titleAnalysis and Characterization of Different Voltage Follower Topologies in 90 nm Technologyen_US
dc.typeFaculty Papersen_US
Appears in Collections:Faculty Papers, EC

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