Carrier- Phonon Interactions in Diluted Nitride Semiconductor Nanostructures

Abstract

The present review discusses the carrier-phonon scattering rates and electron transport in semiconductor nanostructures. Electron momentum relaxation time, energy relaxation time, electron mobility, drift velocity, resistivity, energy loss rate by means of phonon absorption and phonon emission and power loss etc. are discussed with the analogy of electron-phonon interaction. The deformation potential coupling mechanism is used to describe carrier transport properties for diluted nitride semiconductors (e.g. GaAs1-xNx) and diluted magnetic semiconductor (DMS) (e.g. Ga1-xMnxN and Ga1-xMnxAs). The hot electrons are also discussed at low temperatures in the presence of magnetic field. The spin relaxation time has also been discussed for GaAs quantum well using D’yakonov-Perel mechanism