Switching Losses Optimized IGBT Gate

Abstract

In recent years, the increasing demands of an IGBT devices used in power electronic equipment due to their high power handling capability. IGBT devices play a large role in power applications due to their high current, voltage capability, and ease of driving. By increasing the switching speed it is possible to reduce the power dissipation, however, this, in turn, leads to fast current transitions that generate large amounts of electromagnetic interferences (EMI) over wide frequency ranges and increase over-current stress at turn-on, and over-voltage stress at turn-off. The challenge in gate driver design is to find solutions to the dilemma between the requirement to minimize switching losses and the requirement to limit electromagnetic interferences (EMI), peak reverse recovery current at turn-on, and voltage overshoot at turn-off.