Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/7992
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBhatt, Kunjan Mukeshkumar-
dc.date.accessioned2018-10-24T08:48:16Z-
dc.date.available2018-10-24T08:48:16Z-
dc.date.issued2018-05-01-
dc.identifier.urihttp://10.1.7.192:80/jspui/handle/123456789/7992-
dc.description.abstractAs SoC, Analog IP’s and Digital IP’s require memory to store the data, which occupy 50- 60% area on chip so memories are major part of subsystems e.g., embedded SRAMs, and register files Memories. The Memories becomes a most critical component for the SoC Design because of mainly leakage power consumption saving of memory limited by threshold voltage scaling. In memory, it is not possible to operate beyond 0.6V due to SNM issue. The static random access memory(SRAM) macros are designed for two different power supply voltages. An memory array is connected to first power supply and a pre-charge control is connected to the second power supply voltage. Also the precharge control is coupled to a bit line through a bit line pre-charge. The voltage level of both power supply equating by introducing level shifter in between both the power supply. So this methodology separates the supply voltage for array and periphery logic is known as Dual Rail Methodology.en_US
dc.language.isoenen_US
dc.publisherInstitute of Technologyen_US
dc.subjectEC 2016en_US
dc.subjectProject Reporten_US
dc.subjectProject Report 2016en_US
dc.subjectEC Project Reporten_US
dc.subjectEC (VLSI)en_US
dc.subjectVLSIen_US
dc.subjectVLSI 2016en_US
dc.subject16MECen_US
dc.subject16MECVen_US
dc.subject16MECV02en_US
dc.titleDesign and Analysis of Power Efficient Dual Rail Methodologyen_US
dc.typeDissertationen_US
Appears in Collections:Dissertation, EC (VLSI)

Files in This Item:
File Description SizeFormat 
16MECV02.pdf16MECV021.64 MBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.