Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/9150
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dc.contributor.authorPandya, Parth-
dc.date.accessioned2020-07-20T05:26:25Z-
dc.date.available2020-07-20T05:26:25Z-
dc.date.issued2019-06-01-
dc.identifier.urihttp://10.1.7.192:80/jspui/handle/123456789/9150-
dc.description.abstractIn memory domain LPDDR4 is the latest technology which is designed for optimizing and increasing high performance, low power and to boost speed for mobile devices like smart phones, tablets & ultra thin notebooks. It operates at the rate of 4266 MT/s, which is nearly twice to LPDDR3. Here for low power LOW VOLTAGE SWING TER- MINATED LOGIC technique is used which is effective upto 50 percentage power save compare to LPDDR3. As speed and size has been improved using latest technology, ver- ification of LPDDR4 DRAM and entire memory subsystem becomes more critical and challenging. Here i have tried to verify some basic features of LPDDR4 as well as of Memory Subsystem. I have a written code for scoreboard and sequences for data gener- ation to verify different features of memory subsystem.en_US
dc.publisherInstitute of Technologyen_US
dc.relation.ispartofseries17MECV12;-
dc.subjectEC 2017en_US
dc.subjectProject Reporten_US
dc.subjectProject Report 2017en_US
dc.subjectEC Project Reporten_US
dc.subjectEC (VLSI)en_US
dc.subjectVLSIen_US
dc.subjectVLSI 2017en_US
dc.subject17MECen_US
dc.subject17MECVen_US
dc.subject17MECV12en_US
dc.titleFrontend Validation of Memory Subsystem in SoCen_US
dc.typeDissertationen_US
Appears in Collections:Dissertation, EC (VLSI)

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