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DC Field | Value | Language |
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dc.contributor.author | Pandya, Parth | - |
dc.date.accessioned | 2020-07-20T05:26:25Z | - |
dc.date.available | 2020-07-20T05:26:25Z | - |
dc.date.issued | 2019-06-01 | - |
dc.identifier.uri | http://10.1.7.192:80/jspui/handle/123456789/9150 | - |
dc.description.abstract | In memory domain LPDDR4 is the latest technology which is designed for optimizing and increasing high performance, low power and to boost speed for mobile devices like smart phones, tablets & ultra thin notebooks. It operates at the rate of 4266 MT/s, which is nearly twice to LPDDR3. Here for low power LOW VOLTAGE SWING TER- MINATED LOGIC technique is used which is effective upto 50 percentage power save compare to LPDDR3. As speed and size has been improved using latest technology, ver- ification of LPDDR4 DRAM and entire memory subsystem becomes more critical and challenging. Here i have tried to verify some basic features of LPDDR4 as well as of Memory Subsystem. I have a written code for scoreboard and sequences for data gener- ation to verify different features of memory subsystem. | en_US |
dc.publisher | Institute of Technology | en_US |
dc.relation.ispartofseries | 17MECV12; | - |
dc.subject | EC 2017 | en_US |
dc.subject | Project Report | en_US |
dc.subject | Project Report 2017 | en_US |
dc.subject | EC Project Report | en_US |
dc.subject | EC (VLSI) | en_US |
dc.subject | VLSI | en_US |
dc.subject | VLSI 2017 | en_US |
dc.subject | 17MEC | en_US |
dc.subject | 17MECV | en_US |
dc.subject | 17MECV12 | en_US |
dc.title | Frontend Validation of Memory Subsystem in SoC | en_US |
dc.type | Dissertation | en_US |
Appears in Collections: | Dissertation, EC (VLSI) |
Files in This Item:
File | Description | Size | Format | |
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17MECV12.pdf | 17MECV12 | 1.05 MB | Adobe PDF | ![]() View/Open |
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