Development Of Driver Card to Drive SIC MOSFET/IGBT at 100 kHz

Abstract

In power electronics, day by day, power electronics applications demand to reach higher power density, high voltage, high frequency, and higher efficiency. So, fulfill that type of demands require special types of material semiconductor device instead of Si (silicon) semiconductor device. This demand can be full-field by wide-bandgap devices such as silicon carbide MOSFET (SiC MOSFET). To use of SiC device require proper gate drive for SiC device, which gives protection agents to short circuit and open circuit condition and also provide required gate pulse voltage and power for operation of SiC devices. Gate drivers also isolate high power and low power signal devices (microprocessor), also SiC gate driver capable to driven SiC device at high frequency. In the gate driver board, gate signal of SiC MOSFET and microprocessor signal isolated by gate driver IC. Power is feeding to gate driver IC through the power supply unit. In a gate driver required an isolated power supply, the power supply is isolated through the transformer, a parasitic capacitance between two winding plays a critical role in the mitigation of common-mode noise current. this noise of current generated by fast voltage transient (high dv/dt) and fast switching. 100 kV/s isolation require to reduce common-mode noise. SiC MOSFET required more fasters short circuit protection compared to conventional. in short circuit protection, it senses short circuit conditions by sensing voltage drop (VDS) across the device. Study characteristic both devices SiC and Si compare and analyzed in this proposed work. By study SiC device characteristics and material property, specify some functions for selection of gate driver IC. SiC MOSFET can be used high voltage and high-frequency switch-mode power supplies (SMPS), welding power supplies, and uninterrupted power supply (UPS), induction heating, etc...