IR @ Nirma University
Keeping in tune the global developments we are creating an institutional repository using DSpace Software (Digital Library Software). We are archiving institutional knowledge like, faculty papers, theses, and dissertations in PDF format at DSpace. Students can access this digital information anywhere in the campus.
Please use this identifier to cite or link to this item:
http://10.1.7.192:80/jspui/handle/123456789/5521| Title: | Carrier- Phonon Interactions in Diluted Nitride Semiconductor Nanostructures |
| Authors: | Pandya, Ankur Jha, Prafulla |
| Keywords: | Nanostructures Carrier-Phonon Diluted Semiconductor Nitride EC Faculty Paper Faculty Paper ITFEC031 |
| Issue Date: | 2010 |
| Series/Report no.: | ITFEC031-2; |
| Abstract: | The present review discusses the carrier-phonon scattering rates and electron transport in semiconductor nanostructures. Electron momentum relaxation time, energy relaxation time, electron mobility, drift velocity, resistivity, energy loss rate by means of phonon absorption and phonon emission and power loss etc. are discussed with the analogy of electron-phonon interaction. The deformation potential coupling mechanism is used to describe carrier transport properties for diluted nitride semiconductors (e.g. GaAs1-xNx) and diluted magnetic semiconductor (DMS) (e.g. Ga1-xMnxN and Ga1-xMnxAs). The hot electrons are also discussed at low temperatures in the presence of magnetic field. The spin relaxation time has also been discussed for GaAs quantum well using D’yakonov-Perel mechanism |
| Description: | Journal of Science, Vol. 1 (1), 2010, Page No. 16 - 26 |
| URI: | http://hdl.handle.net/123456789/5521 |
| Appears in Collections: | Faculty Papers, EC |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ITFEC031-2.pdf | ITFEC031-2 | 206.56 kB | Adobe PDF |  View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.