Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/6020
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dc.contributor.authorMandir, Mansi-
dc.date.accessioned2015-08-14T09:36:42Z-
dc.date.available2015-08-14T09:36:42Z-
dc.date.issued2015-06-01-
dc.identifier.urihttp://hdl.handle.net/123456789/6020-
dc.description.abstractIn the recent year, power electronics have increasing applications in high voltage power system which can be achieved by connecting lower rating power semiconductor devices in series connection to improve the power rating and voltage rating of power electronic converters. The main issue in series - connected insulated gate bipolar transistors (IGBTs) is the voltage balancing during dynamic and static states across each device. Voltage imbalance is mainly due to delay in gate drive signal, unequal leakage current of the device and mismatch in switching characteristics of the device. There are various methods for minimizing the voltage imbalance among the series connected devices in the string. Aim of this project is develop the voltage balancing circuit which will solve both static and dynamic voltage balance with simple structure, high reliability, low additional losses in the balancing circuit and number of devices can be easily connected in series.en_US
dc.publisherInstitute of Technologyen_US
dc.relation.ispartofseries13MEEP06;-
dc.subjectElectrical 2013en_US
dc.subjectProject Report 2013en_US
dc.subjectElectrical Project Reporten_US
dc.subjectProject Reporten_US
dc.subjectEE (PEMD)en_US
dc.subjectPower Electronics, Machines & Drivesen_US
dc.subject13MEEen_US
dc.subject13MEEPen_US
dc.subject13MEEP06en_US
dc.subjectPEMDen_US
dc.subjectPEMD 2013en_US
dc.titleDynamic Voltage Balancing of the Series Connected IGBTsen_US
dc.typeDissertationen_US
Appears in Collections:Dissertation, EE (PEMD)

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