Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/6029
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dc.contributor.authorGehlot, Swati-
dc.date.accessioned2015-08-14T11:29:59Z-
dc.date.available2015-08-14T11:29:59Z-
dc.date.issued2015-06-01-
dc.identifier.urihttp://hdl.handle.net/123456789/6029-
dc.description.abstractAs a scheme of delivering accumulated energy in short period of time to gain high instant power, pulsed power technology is widely used to generate high power transient electric pulses. In recent years low energy nanosecond range pulse width application has gained a lot of attention. The improvement of solid state switches make it possible to build a full solid state pulse power unit to generate nanosecond pulses. Pulse generators are capable of producing high voltage pulses with fast leading edge rise time. HV pulse generator can be differentiated mainly in two parts where rise and fall time are not critical and in applications where rise time should not exceed 5ns. In the latter application mentioned above would require power semiconductor devices using series/ parallel combinations. The main aim of this project is to design an energizer using flyback topology combined with step up transformer to generate pulse with a rise time of 5ns with peak output voltage of 4 kV at 500 Ω load. The system will be simulated using Psim/Pspice and Gecko Circuits software and when satisfied output will be obtained, the hardware of the same will be implemented.en_US
dc.publisherInstitute of Technologyen_US
dc.relation.ispartofseries13MEEP17;-
dc.subjectElectrical 2013en_US
dc.subjectProject Report 2013en_US
dc.subjectElectrical Project Reporten_US
dc.subjectProject Reporten_US
dc.subjectEE (PEMD)en_US
dc.subjectPower Electronics, Machines & Drivesen_US
dc.subject13MEEen_US
dc.subject13MEEPen_US
dc.subject13MEEP17en_US
dc.subjectPEMDen_US
dc.subjectPEMD 2013en_US
dc.titleHigh Voltage Pulse Generator using Semiconductor Devicesen_US
dc.typeDissertationen_US
Appears in Collections:Dissertation, EE (PEMD)

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