Design Of a Ka-Band Low Noise Amplifier using MMIC

Abstract

This thesis is about the design of a Ka-band Low Noise Amplifier (LNA) operating between frequency ranges of 26.5-30 GHz. The technical specification of any LNA includes gain, which is approximately between 15-20 dB and minimum low noise figure < 3 dB. The transistor used to design is a p-HEMT model manufactured by United Monolithic Semiconductor which is a low noise transistor model. The thesis commits the results of the LNA designed for overall frequency range i.e.26.5-30 GHz. It also satisfies the use of Cascode transistor which assists in providing gain between 16-14dB and a minimum Noise Figure (NFmin) of 2.12-2.13 dB and Noise Figure (NF) < 3 dB. The essential benefit of using Cascode topology is to get high gain and further more application of resistor on the drain side provides necessary stability to the design. The matching networks attached at input and output ports helped in achieving gain stability at the respective ports.