Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/4362
Title: Analysis and Characterization of Various Current Mirror Topologiesin 90 nm Technology
Authors: Chikani, Jaydeep
Chaudhari, Parag
Savani, Vijay G.
Keywords: Current Mirror
Excess Gate Voltage
Minimum Output Voltage
MOSFET
Output Impedance
Power Dissipation
Transfer Characteristics
EC Faculty Paper
Faculty Paper
ITFEC024
Issue Date: Dec-2012
Publisher: IJETAE
Series/Report no.: ITFEC024-6
Abstract: Although large electronic systems can be constructed almost entirely with digital techniques, many systems still have analog components and current mirror is the core structure for almost all analog and mixed mode circuits. It determines the performance of analog structures, which largely depends on their characteristics. In this paper, we have analyzed various topologies of current mirror using 90 nm technology in Mentor Graphics and compared them based on different parameters like power dissipation, minimum output voltage, bandwidth, transfer characteristics etc.
Description: International Journal of Emerging Technology and Advanced Engineering, Vol. 2 (12), December, 2012, Page No. 151 - 156
URI: http://10.1.7.181:1900/jspui/123456789/4362
ISSN: 2250-2459
Appears in Collections:Faculty Papers, EC

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