Please use this identifier to cite or link to this item: http://10.1.7.192:80/jspui/handle/123456789/4362
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dc.contributor.authorChikani, Jaydeep-
dc.contributor.authorChaudhari, Parag-
dc.contributor.authorSavani, Vijay G.-
dc.date.accessioned2014-01-09T08:48:19Z-
dc.date.available2014-01-09T08:48:19Z-
dc.date.issued2012-12-
dc.identifier.issn2250-2459-
dc.identifier.urihttp://10.1.7.181:1900/jspui/123456789/4362-
dc.descriptionInternational Journal of Emerging Technology and Advanced Engineering, Vol. 2 (12), December, 2012, Page No. 151 - 156en_US
dc.description.abstractAlthough large electronic systems can be constructed almost entirely with digital techniques, many systems still have analog components and current mirror is the core structure for almost all analog and mixed mode circuits. It determines the performance of analog structures, which largely depends on their characteristics. In this paper, we have analyzed various topologies of current mirror using 90 nm technology in Mentor Graphics and compared them based on different parameters like power dissipation, minimum output voltage, bandwidth, transfer characteristics etc.en_US
dc.publisherIJETAEen_US
dc.relation.ispartofseriesITFEC024-6en_US
dc.subjectCurrent Mirroren_US
dc.subjectExcess Gate Voltageen_US
dc.subjectMinimum Output Voltageen_US
dc.subjectMOSFETen_US
dc.subjectOutput Impedanceen_US
dc.subjectPower Dissipationen_US
dc.subjectTransfer Characteristicsen_US
dc.subjectEC Faculty Paperen_US
dc.subjectFaculty Paperen_US
dc.subjectITFEC024en_US
dc.titleAnalysis and Characterization of Various Current Mirror Topologiesin 90 nm Technologyen_US
dc.typeFaculty Papersen_US
Appears in Collections:Faculty Papers, EC

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