Please use this identifier to cite or link to this item:
http://10.1.7.192:80/jspui/handle/123456789/4362
Title: | Analysis and Characterization of Various Current Mirror Topologiesin 90 nm Technology |
Authors: | Chikani, Jaydeep Chaudhari, Parag Savani, Vijay G. |
Keywords: | Current Mirror Excess Gate Voltage Minimum Output Voltage MOSFET Output Impedance Power Dissipation Transfer Characteristics EC Faculty Paper Faculty Paper ITFEC024 |
Issue Date: | Dec-2012 |
Publisher: | IJETAE |
Series/Report no.: | ITFEC024-6 |
Abstract: | Although large electronic systems can be constructed almost entirely with digital techniques, many systems still have analog components and current mirror is the core structure for almost all analog and mixed mode circuits. It determines the performance of analog structures, which largely depends on their characteristics. In this paper, we have analyzed various topologies of current mirror using 90 nm technology in Mentor Graphics and compared them based on different parameters like power dissipation, minimum output voltage, bandwidth, transfer characteristics etc. |
Description: | International Journal of Emerging Technology and Advanced Engineering, Vol. 2 (12), December, 2012, Page No. 151 - 156 |
URI: | http://10.1.7.181:1900/jspui/123456789/4362 |
ISSN: | 2250-2459 |
Appears in Collections: | Faculty Papers, EC |
Files in This Item:
File | Description | Size | Format | |
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ITFEC024-6.pdf | ITFEC024-6 | 702 kB | Adobe PDF | ![]() View/Open |
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